As she tells Compound Semiconductor, more than twenty automotive companies are already using silicon carbide Schottky barrier diodes or MOSFETs in DC-DC converters, the main inverter and onboard chargers, fueling 29% CAGR from 2017 to 2023.
CREE, a U.S. silicon carbide (SiC) technology developer, has unveiled its new Wolfspeed 605 V SiC metal-oxide-semiconductor field-effect transistor (MOSFET). It claims the new transistor is ideal for a broad range of industrial appliions, including silicon carbide inverters , on-board electric vehicle chargers, fast DC charging stations, and data center servers.
This inverter uses a Silicon Carbide power MOSFET of 1200V and 100A from Cree. Some design and optimization points of the inverter are demonstrated. Experimental results are shown at the end of the paper. Published in: 2013 15th European Conference on
Silicon Carbide (SiC) and Gallium Nitride (GaN) The key for the next essential step towards an energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors which allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together.
2013/1/30· Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes, and more recently, SiC-MOSFETs with device current capability >50 A in a single die.
StarPower Semiconductor and Cree, Inc. announced that Zhengzhou Yutong Group Co., Ltd. (Yutong Group), a large-scale industrial Chinese manufacturer of commercial vehicles that specializes in electric buses, is using Cree 1200V silicon carbide devices in a
2019/9/12· Cree Delphi Technologies silicon carbide inverter Supplier UK According to British firm, Delphi Technologies, it is the first company in the industry to start series production of an 800-volt silicon carbide inverter for electric vehicles.
That’s why Cree announced numerous wafer supply agreements with other companies that make silicon carbide devices. We did an announcement with Delphi, where we sell chips to Delphi and they sell an inverter to a European OEM.
2019/9/11· Partnership with Cree, a leader in silicon carbide (SiC) semiconductors PR Newswire FRANKFURT, Sept. 11, 2019 FRANKFURT, Sept. 11, 2019 /PRNewswire/ -- …
Delphi Technologies PLC (NYSE: DLPH), a global provider of automotive propulsion technologies, and Cree, Inc. (Nasdaq: CREE), a leader in silicon carbide semiconductors, announce a partnership to utilize silicon carbide semiconductor device technology to enable faster, smaller, lighter and more powerful electronic systems for future electric vehicles (EV).
2019/2/28· Cree is the market leader in silicon carbide (SiC) products, and the company has a wide range of products that include a variety of components and packages at various voltages. Cree …
Cree is committed to leading the global transition from silicon to silicon carbide and recently announced silicon carbide capacity expansion to generate up to a 30-fold increase in capacity. The company offers a comprehensive set of silicon carbide and GaN (Gallium nitride) power and RF (radio frequency) solutions through its Wolfspeed® business unit.
Silicon carbide is expected to have double-digit growth and we are expecting this share to approach 10% in five years’ time,” Lin said. In total, the SiC device market is expected to grow from $420 million in 2018 to $564 million in 2019, according to Yole.
A 55 kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes Abstract- Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Presently, only SiC Schottky diodes are
Delphi Technologies 800-volt inverter uses state-of-the-art silicon carbide MOSFET semiconductors (silicon carbide-based metal-oxide-semiconductor field-effect transistor wide band gap technology).
High Power Silicon Carbide Inverter Design – 100kW Griud Connect Building Block1 Leo Casey (SatCon Technology Corporation; Boston, Massachusetts, USA); [email protected] Bogdan Borowy and Gregg Davis (SatCon) Acknowledgements: This paper describes work being sponsored by the DOE and supervised by Dr. Imre Gyuk
Comparison of Silicon and Silicon Carbide Compared to conventional Silicon-based high-voltage IGBTs or MOSFETs (> 600 V), SiC MOSFETs offer several advantages. For example, Infineon’s 1200V SiC MOSFETs (CoolSiC) have lower gate charge and
2018/2/7· Deceer 24, 2019 Tags 1.7kV Automotive Avionics charger converter Device devices diamond electric car Energy T&D Fab GaN IGBT infineon inverter M&A manufacturing market mosfet packaging passive photovoltaic power module PowerSiP PV inverter renewable Semiconductor SiC Solar start …
must be reduced. The power losses of the inverter have to be kept on a low level, while the harmonic losses of the electric motor have to be reduced. The 800 V system voltage level offers the possibility to achieve both goals, if the silicon carbide (SiC)
The approach of this program is to look at the complete system of inverter and motor to identify the best coination of device technology and switching strategy. In this context SiC semiconductors – e.g. SiC MOSFETs for 800-volt battery systems – offer more efficient switching in the inverter (higher frequency, steeper switching slopes) and cause fewer harmonic losses in the electric motor.
Continental AG, commonly known as Continental, is a German multinational automotive parts manufacturing company specializing in brake systems, interior electronics, automotive safety, powertrain and chassis components, tachographs, tires and other parts for the automotive and transportation industries. The powertrain business area of Continental AG, Vitesco Technologies GH, …
In light of recent silicon carbide (SiC) technology advances, commercial production of 1200-V 4H-SiC  power MOSFETs is now feasible. There have been improvements in 4H-SiC substrate quality and epitaxy, optimized device designs and fabriion processes, plus increased channel mobility with nitridation annealing.