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Silicon carbide is a compound semiconductor, which has been receiving interest due to its excellent physical properties, radiation resistance, near chemical inertness, and a large bandgap [68]. This material, unlike pure silicon, has many crystalline stacking sequences, denoted as polytypes, which have slightly different physical, electrical, and optical properties.

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Silicon crystallizes such that each silicon atom forms bonds with four other silicon atoms fully accommodating all four outer valence electrons. If a phosphorus atom is substituted for a silicon atom in an otherwise silicon lattice, then one of the outer valence electrons within the phosphorus atom is not bound to a neighboring silicon atom as shown in Fig. 1.7(a).

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heat-resistant cement (5-10 vol. %), silicon carbide powder (20‐40 vol. %) and hollow ceramic microspheres (20-40 vol. %). Either SiC previously impregnated with silicon (Si) or a Al-W-B powder in the amount of 5 to 25 volume % with particle size of 0.02 to 0.1

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Tungsten carbide has proven itself as a highly abrasive resistant material with a Ph range of 7 to 14, depending on chemical composition. For appliions with a lower Ph level the silicon carbide vs. silicon carbide mechanical seal is recommended with its Ph range from 0 …

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Gallium oxide/silicon carbide heterojunction yields fast, high-sensitivity detection of UVC light 9 October 2013 MACOM launches 5W GaN power transistor in 2.5mm x 4.5mm surface-mount plastic package 9 October 2013 Russia’s Rostelecom selects Infinera

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